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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+8 Vdc

Gate Bias Voltage (Vgg)

-2 to 0 Vdc

RF Input Power (RFIN)(Vdd = +7.0 Vdc)

+15 dBm

Channel Temperature

175 °C

Continuous Pdiss (T= 85 °C)

(derate 117.6 mW/°C above 85 °C)

10.59 W

Thermal Resistance

(channel to die bottom)

8.5 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-55 to +85 °C

Vdd (V)

Idd (mA)

+6.5

1355

+7.0

1340

+7.5

1325

Typical Supply Current vs. Vdd

Note: Amplifier will operate over full voltage ranges shown

above Vgg adjusted to achieve Idd = 1340 mA at +7.0V

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

v02.0109

HMC591

GaAs PHEMT MMIC 2 WATT

POWER AMPLIFIER, 6 - 10 GHz

Reverse Isolation

vs. Temperature, 7V @ 1340 mA

Power Dissipation

-80

-70

-60

-50

-40

-30

-20

-10

0

6

6.5

7

7.5

8

8.5

9

9.5

10

+25C

+85C

-40C

FREQUENCY (GHz)

Gain & Power vs. Supply Current @ 8 GHz

Gain & Power vs. Supply Voltage @ 8 GHz

18

22

26

30

34

38

940

1140

1340

GAIN

P1dB

Psat

Idd SUPPLY CURRENT (mA)

18

22

26

30

34

38

6.5

7

7.5

GAIN

P1dB

Psat

Vdd SUPPLY VOLTAGE (V)

5

6

7

8

9

10

-14

-10

-6

-2

2

6

10

14

6GHz

7GHz

8GHz

9GHz

10GHz

INPUT POWER (dBm)