| 전자부품 데이터시트 검색엔진 |
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HMC591 데이터시트(PDF) 9 Page - Micross Components |
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HMC591 데이터시트(HTML) 9 Page - Micross Components |
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9 / 11 page ![]() 3 3 - 83 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Pad Descriptions Pad Number Function Description Interface Schematic 1RFIN This pad is AC coupled and matched to 50 Ohms. 3 - 5, 7, 8 Vdd 1-5 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. 6RFOUT This pad is AC coupled and matched to 50 Ohms. 9Vgg Gate control for amplifier. Adjust to achieve Idd of 1340 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 0.1 μF are required. Die Bottom GND Die bottom must be connected to RF/DC ground. v02.0109 HMC591 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz |
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