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STM32F413RHT6 데이터시트(PDF) 86 Page - STMicroelectronics

부품명 STM32F413RHT6
상세설명  ARM-Cortex-M4 32b MCUFPU, 125 DMIPS, up to 1.5MB Flash, 320KB RAM, USB OTG FS, 1 ADC, 2 DACs, 2 DFSDMs
PDF  207 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32F413RHT6 데이터시트(HTML) 86 Page - STMicroelectronics

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Electrical characteristics
STM32F413xG/H
86/207
DocID029162 Rev 2
6.3.6
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 22: Current consumption
measurement scheme.
All the run-mode current consumption measurements given in this section are performed
with a reduced code that gives a consumption equivalent to CoreMark code.
VPDRhyst(2) PDR hysteresis
-
-
40
-
mV
VBOR1
Brownout level 1
threshold
Falling edge
2.13
2.19
2.24
V
Rising edge
2.23
2.29
2.33
VBOR2
Brownout level 2
threshold
Falling edge
2.44
2.50
2.56
Rising edge
2.53
2.59
2.63
VBOR3
Brownout level 3
threshold
Falling edge
2.75
2.83
2.88
Rising edge
2.85
2.92
2.97
VBORhyst(2) BOR hysteresis
-
-
100
-
mV
TRSTTEMPO
(2)(3)
POR reset timing
-
0.5
1.5
3.0
ms
IRUSH(2)
In-Rush current on
voltage regulator power-
on (POR or wakeup from
Standby)
-
-
160
200
mA
ERUSH(2)
In-Rush energy on
voltage regulator power-
on (POR or wakeup from
Standby)
VDD = 1.7 V, TA = 125 °C,
IRUSH = 171 mA for 31 µs
--
5.4
µC
1. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
2. Guaranteed by design.
3. The reset timing is measured from the power-on (POR reset or wakeup from VBAT) to the instant when first
instruction is fetched by the user application code.
Table 21. Embedded reset and power control block characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit



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