STM32F413RHT6 datasheet(119/207 Pages) STMICROELECTRONICS

부품명	STM32F413RHT6

상세설명	ARM-Cortex-M4 32b MCUFPU, 125 DMIPS, up to 1.5MB Flash, 320KB RAM, USB OTG FS, 1 ADC, 2 DACs, 2 DFSDMs

PDF	207 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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119 / 207 page

DocID029162 Rev 2

119/207

STM32F413xG/H

Electrical characteristics

174

Table 52. Flash memory endurance and data retention

Table 51. Flash memory programming with VPP voltage

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1)

1. Guaranteed by design.

Unit

tprog

Double word programming

TA = 0 to +40 °C

VDD = 3.3 V

VPP = 8.5 V

100(2)

2. The maximum programming time is measured after 100K erase operations.

µs

tERASE16KB Sector (16 KB) erase time

230

tERASE64KB Sector (64 KB) erase time

490

tERASE128KB Sector (128 KB) erase time

875

tME

Mass erase time

9.8

Vprog

Programming voltage

2.7

3.6

VPP

VPP voltage range

IPP

Minimum current sunk on

the VPP pin

-10

tVPP(3)

3. VPP should only be connected during programming/erasing.

Cumulative time during

which VPP is applied

hour

Symbol

Parameter

Conditions

Value

Unit

Min(1)

1. Guaranteed by characterization.

NEND

Endurance

TA = –40 to +85 °C (6 suffix versions)

TA = –40 to +105 °C (7 suffix versions)

TA = –40 to +125 °C (3 suffix versions)

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

2. Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C

1 kcycle(2) at TA = 125 °C

10 kcycle(2) at TA = 55 °C

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