DS06-20209-2E

FUJITSU SEMICONDUCTOR

DATA SHEET

Semicustom

CMOS

Standard cell

CS86 Series

s DESCRIPTION

The CS86 series of 0.18

µm standard cells is a line of CMOS ASICs based on higher integration implemented

by introducing wiring pitch reduction technology and on I/O pad placement technology to the conventional CS81

series.

The CS86 series has three types of cell sets (CS86MN, CS86MZ, and CS86ML), covering a variety of applications,

from portable devices requiring low power consumption to image processors requiring large-scale circuitry and

high speed.The three types of cell sets can be contained on one chip, allowing those system LSIs to be imple-

mented which require low power consumption as well as high-speed operation for certain types of processing.

s FEATURES

• Technology

: 0.18

µm silicon-gate CMOS, 4- to 6-layer wiring

The same chip can therefore incorporate the standard transistor cell and the ultrahigh-

speed or low-leakage process cell together.

• Supply voltage

:

+1.8 V ± 0.15 V (normal) to +1.1 V ± 0.1 V

• Junction temperature range :

−40 °C to +125 °C

• Cell set

CS86MN :

Offers standard transistor characteristics. Designed as a library for products requiring higher

throughputs.

CS86MZ :

Offers transistor characteristics for ultra high-speed operation. Designed as a library for

products that require higher processing speeds than those provided by CS86MN.

CS86ML :

Offers transistor charactersistics with less leak current. Designed as a library for mobile

devices and other products requiring lower power consumption.

• Cell Specifications :

*1 : 2 input NAND cell (low-power type) , F/O

= 2, normal load, Power supply voltage 1.8 V, Temperature = +25 °C

*2 : 2 input NAND cell (low-power type) , F/O

= 1, 4 Grid, Power supply voltage 1.8 V, Temperature = +25 °C

*3 : 2 input NAND cell (low-power type) , F/O

= 0, non load, Power supply voltage 1.8 V, Temperature = +25 °C

(Continued)

Cell set name

CS86MZ

CS86MN

CS86ML

70 ps

88 ps

136 ps

42.7 nW/MHz

40.1 nW/MHz

38.3 nW/MHz

3.922 nW

0.023 nW

0.0067 nW