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LP3928 데이터시트(PDF) 7 Page - National Semiconductor (TI) |
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LP3928 데이터시트(HTML) 7 Page - National Semiconductor (TI) |
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7 / 11 page ![]() Electrical Characteristics Unless otherwise specified: H = V IH min, L = VIL max, CVBAT = 1 µF, IOUT = 1 mA, CVCCB = 1 µF, CVCCA = 1 µF. Typical values and limits appearing in standard typeface apply for TJ = 25˚C. Limits appearing in boldface type apply over the entire junction temperature range for operation, −40˚C to +125˚C. (Note 9) (Continued) LDO Electrical Characteristics (Continued) Unless otherwise specified: EN1 = L, EN2 = H; V OUTnom = 2.85V, VBAT =VOUT(nom) + 0.5V. Symbol Parameter Conditions Typical Limit Units Min Max PSRR Power Supply Rejection Ratio (Note 29) V BAT =VOUT(nom) + 1V, f = 1 kHz, I OUT = 50 mA, (Figure 2) 40 dB V BAT =VOUT(nom) + 1V, f = 50 kHz, I OUT = 50 mA, (Figure 2) 20 I Q Quiescent Current I OUT = 1mA 85 150 µA I OUT = 1 mA to 150 mA 130 200 ∆V DO Dropout Voltage (Note 22) I OUT = 1 mA 0.4 2 mV I OUT =50 mA 20 35 I OUT = 100 mA 45 70 I OUT = 150 mA 60 100 I SC Short Circuit Current Limit V BAT = 6V, Output Grounded (Steady State) 500 mA I OUT(PK) Peak Output Current V OUT ≥ V OUT(nom) − 5%, VBAT = 6V 460 200 mA T ON Turn-On Time (Note 23) (Note 29) 200 130 430 µs ρn (1/f) Output Noise Density f = 1 kHz, C OUT = 1 µF 0.6 µV/ √Hz e n Output Noise Voltage BW = 10 Hz to 100 kHz, C OUT = 1 µF 45 µVrms Output Capacitor Output Filter Capacitance (Note 24) V BAT = 3.05V to 6V, I OUT = 1mA to 150 mA 122 µF Output Filter Capacitance ESR (Note 25) V BAT = 3.05V to 6V, I OUT = 1mA to 150 mA 5 500 m Ω Thermal Shutdown Thermal Shutdown Temperature (Note 26) 160 ˚C Thermal Shutdown Hysteresis 20 ˚C Note 3: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test condition, see Electrical Characteristics tables. Note 4: All voltages are with respect to the potential at the GND pin. Note 5: The Absolute Maximum power dissipation depends on the ambient temperature and can be calculated using the formula P= (T J −TA)/ θ JA, (1) Where TJ is the junction temperature, TA is the ambient temperature, and θJA is the junction-to-ambient thermal resistance. The 360 mW rating appearing under Absolute Maximum Ratings results from substituting the Absolute Maximum junction temperature, 150˚C, for TJ, 85˚C for TA, and 180˚C/W for θJA. More power can be dissipated safely at ambient temperatures below 85˚C. The thermal resistance can be better or worse than 180˚C/W depending on board layout. Larger copper planes and thermal vias should be used to conduct heat away from the micro SMD solder bumps. Note 6: The Human Body Model is 100 pF discharged through 1.5 k Ω resistor into each pin. Note 7: VCCB can be supplied from an external voltage source in the range of 1.65V to 3.6V, as long as both VBAT and VCCB are connected to the external source. Only the LDO quiescent current (see DC electrical specifications) will add to the level-shifter current consumption. This Operating Rating does not imply guaranteed performance. For guaranteed performance limits and associated test conditions, see Electrical Characteristics tables. Note 8: Like the Absolute Maximum power dissipation, the maximum power dissipation for operation depends on the ambient temperature. The 220 mW rating appearing under Operating Ratings results from substituting the maximum junction temperature for operation, 125˚C, for TJ, 85˚C for TA, and 180˚C/W for θJA into (1) above. More power can be dissipated at ambient temperatures below 85˚C. The thermal resistance can be better or worse than 180˚C/W depending on board layout. Larger copper planes and thermal vias should be used to conduct heat away from the micro SMD solder bumps. Note 9: All limits are guaranteed. All electrical characteristics having room-temperature limits are tested during production with TJ = 25˚C or correlated using Statistical Quality Control (SQC) methods. All hot and cold limits are guaranteed by correlating the electrical characteristics to process and temperature variations and applying statistical process control. Note 10: The target output voltage, which is labeled VOUT(target), is the desired or ideal output voltage. The nominal output voltage, which is labeled VOUT(nom),is the output voltage measured with the input 0.5V above VOUT(target) anda1mA load. Note 11: Input leakage current for pins DIRi, EN1, EN2. Note 12: Input leakage current for pins Bi, LatchClk. Note 13: This is the static current consumption from VCCB for channel (i) when DIRi=H (A→B direction). Note 14: This is the static current consumption from VCCB for channel (i) when DIRi=L (B→A direction). Note 15: This is the static current consumption from VCCB for the part common to the channels. www.national.com 7 |
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