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LP3928 데이터시트(PDF) 7 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
부품명 LP3928
상세설명  High Speed Bi-Directional Level Shifter and Ultra Low-Dropout CMOS Voltage Regulator
PDF  11 Pages
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제조업체  NSC [National Semiconductor (TI)]
홈페이지  http://www.national.com
Logo NSC - National Semiconductor (TI)

LP3928 데이터시트(HTML) 7 Page - National Semiconductor (TI)

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Electrical Characteristics Unless otherwise specified: H = V
IH min, L = VIL max, CVBAT = 1 µF, IOUT = 1 mA,
CVCCB = 1 µF, CVCCA = 1 µF. Typical values and limits appearing in standard typeface apply for TJ = 25˚C. Limits appearing in
boldface type apply over the entire junction temperature range for operation, −40˚C to +125˚C. (Note 9) (Continued)
LDO Electrical Characteristics (Continued)
Unless otherwise specified: EN1 = L, EN2 = H; V
OUTnom = 2.85V, VBAT =VOUT(nom) + 0.5V.
Symbol
Parameter
Conditions
Typical
Limit
Units
Min
Max
PSRR
Power Supply Rejection Ratio
(Note 29)
V
BAT =VOUT(nom) + 1V,
f = 1 kHz, I
OUT = 50 mA, (Figure 2)
40
dB
V
BAT =VOUT(nom) + 1V,
f = 50 kHz, I
OUT = 50 mA, (Figure 2)
20
I
Q
Quiescent Current
I
OUT = 1mA
85
150
µA
I
OUT = 1 mA to 150 mA
130
200
∆V
DO
Dropout Voltage (Note 22)
I
OUT = 1 mA
0.4
2
mV
I
OUT =50 mA
20
35
I
OUT = 100 mA
45
70
I
OUT = 150 mA
60
100
I
SC
Short Circuit Current Limit
V
BAT = 6V, Output Grounded (Steady
State)
500
mA
I
OUT(PK)
Peak Output Current
V
OUT
≥ V
OUT(nom) − 5%, VBAT = 6V
460
200
mA
T
ON
Turn-On Time (Note 23) (Note
29)
200
130
430
µs
ρn (1/f)
Output Noise Density
f = 1 kHz, C
OUT = 1 µF
0.6
µV/
Hz
e
n
Output Noise Voltage
BW = 10 Hz to 100 kHz, C
OUT = 1 µF
45
µVrms
Output
Capacitor
Output Filter Capacitance
(Note 24)
V
BAT = 3.05V to 6V,
I
OUT = 1mA to 150 mA
122
µF
Output Filter Capacitance ESR
(Note 25)
V
BAT = 3.05V to 6V,
I
OUT = 1mA to 150 mA
5
500
m
Thermal
Shutdown
Thermal Shutdown Temperature
(Note 26)
160
˚C
Thermal Shutdown Hysteresis
20
˚C
Note 3: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device
is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test condition, see Electrical
Characteristics tables.
Note 4: All voltages are with respect to the potential at the GND pin.
Note 5: The Absolute Maximum power dissipation depends on the ambient temperature and can be calculated using the formula
P= (T
J −TA)/
θ
JA,
(1)
Where TJ is the junction temperature, TA is the ambient temperature, and θJA is the junction-to-ambient thermal resistance. The 360 mW rating appearing under
Absolute Maximum Ratings results from substituting the Absolute Maximum junction temperature, 150˚C, for TJ, 85˚C for TA, and 180˚C/W for θJA. More power can
be dissipated safely at ambient temperatures below 85˚C. The thermal resistance can be better or worse than 180˚C/W depending on board layout. Larger copper
planes and thermal vias should be used to conduct heat away from the micro SMD solder bumps.
Note 6: The Human Body Model is 100 pF discharged through 1.5 k
Ω resistor into each pin.
Note 7: VCCB can be supplied from an external voltage source in the range of 1.65V to 3.6V, as long as both VBAT and VCCB are connected to the external source.
Only the LDO quiescent current (see DC electrical specifications) will add to the level-shifter current consumption. This Operating Rating does not imply guaranteed
performance. For guaranteed performance limits and associated test conditions, see Electrical Characteristics tables.
Note 8: Like the Absolute Maximum power dissipation, the maximum power dissipation for operation depends on the ambient temperature. The 220 mW rating
appearing under Operating Ratings results from substituting the maximum junction temperature for operation, 125˚C, for TJ, 85˚C for TA, and 180˚C/W for θJA into
(1) above. More power can be dissipated at ambient temperatures below 85˚C. The thermal resistance can be better or worse than 180˚C/W depending on board
layout. Larger copper planes and thermal vias should be used to conduct heat away from the micro SMD solder bumps.
Note 9: All limits are guaranteed. All electrical characteristics having room-temperature limits are tested during production with TJ = 25˚C or correlated using
Statistical Quality Control (SQC) methods. All hot and cold limits are guaranteed by correlating the electrical characteristics to process and temperature variations
and applying statistical process control.
Note 10: The target output voltage, which is labeled VOUT(target), is the desired or ideal output voltage. The nominal output voltage, which is labeled VOUT(nom),is
the output voltage measured with the input 0.5V above VOUT(target) anda1mA load.
Note 11: Input leakage current for pins DIRi, EN1, EN2.
Note 12: Input leakage current for pins Bi, LatchClk.
Note 13: This is the static current consumption from VCCB for channel (i) when DIRi=H (A→B direction).
Note 14: This is the static current consumption from VCCB for channel (i) when DIRi=L (B→A direction).
Note 15: This is the static current consumption from VCCB for the part common to the channels.
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