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STM32F411CE 데이터시트(PDF) 75 Page - STMicroelectronics

부품명 STM32F411CE
상세설명  ARM® Cortex®-M4 32b MCUFPU, 125 DMIPS, 512KB Flash, 128KB RAM, USB OTG FS, 11 TIMs, 1 ADC, 13 comm. interfaces
PDF  149 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F411CE 데이터시트(HTML) 75 Page - STMicroelectronics

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STM32F411xC STM32F411xE
Electrical characteristics
123
Table 28. Typical and maximum current consumption in Stop mode - VDD=3.6 V
Symbol
Conditions
Parameter
Typ
Max(1)
Unit
TA =
25 °C
TA =
25 °C
TA =
85 °C
TA =
105 °C
TA =
125 °C
IDD_STOP
Flash in Stop mode, all
oscillators OFF, no
independent watchdog
Main regulator usage
113.7 145(2) 410
720(2)
1217
µA
Low power regulator usage
43.1
68(2)
310
600(2)
1073
Flash in Deep power
down mode, all
oscillators OFF, no
independent watchdog
Main regulator usage
76.2
105(2) 320
600(2)
1019
Low power regulator usage
14
38(2)
275
560(2)
1025
Low power low voltage regulator
usage
10
30(2)
235
510(2)
928
1. Guaranteed by characterization results.
2. Guaranteed by test in production.
Table 29. Typical and maximum current consumption in Standby mode - VDD= 1.7 V
Symbol
Parameter
Conditions
Typ(1)
Max(2)
Unit
TA =
25 °C
TA =
25 °C
TA =
85 °C
TA =
105 °C
TA =
125 °C
IDD_STBY
Supply current
in Standby mode
Low-speed oscillator (LSE) and RTC ON
2.4
4
12
25
50
µA
RTC and LSE OFF
1.8
3(3)
11
24(3)
49
1. When the PDR is OFF (internal reset is OFF), the typical current consumption is reduced by 1.2 µA.
2. Guaranteed by characterization results.
3. Guaranteed by test in production.
Table 30. Typical and maximum current consumption in Standby mode - VDD= 3.6 V
Symbol
Parameter
Conditions
Typ(1)
Max(2)
Unit
TA =
25 °C
TA =
25 °C
TA =
85 °C
TA =
105 °C
TA =
125 °C
IDD_STBY
Supply current
in Standby
mode
Low-speed oscillator (LSE) and RTC ON
2.8
5
14
29
59
µA
RTC and LSE OFF
2.1
4(3)
13.5
28(3)
58
1. When the PDR is OFF (internal reset is OFF), the typical current consumption is reduced by 1.2 µA.
2. Guaranteed by characterization results.
3. Guaranteed by test in production.



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