This is information on a product in full production.

January 2014

DocID17153 Rev 7

1/13

STAC4932B

HF/VHF/UHF RF power N-channel MOSFET

Figure 1. Pin connection

Features

• Excellent thermal stability

• Common source push-pull configuration

• P

OUT

= 1000 W min. (1200 W typ.) with 26 dB

gain @ 123 MHz

• Pulse conditions: 1 msec - 10%

• In compliance with the 2002/95/EC European

directive

Description

The STAC4932B is an N-channel MOS field-effect

RF power transistor. It is intended for 100 V pulse

applications up to 250 MHz. This device is

suitable for use in industrial, scientific and medical

applications. The STAC4932B benefits from the

latest generation of efficient, patent-pending

STAC

®

package technology.

1

1

2

3

3

1. Drain

3. Gate

2. Source (bottom side)

STAC244B

Air cavity

Table 1. Device summary

Order code

Marking

Package

Packaging

STAC4932B

STAC4932

(1)

STAC244B

Plastic tray

1.

For more details please refer to

Chapter 6: Marking, packing and shipping specifications.

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