LNBH25 datasheet(14/34 Pages) STMICROELECTRONICS

14 / 34 page

Typical application circuits

LNBH25

14/34

Doc ID 022433 Rev 4

Typical application circuits

Figure 6.

DiSEqC 1.x application circuit

Table 5.

DiSEqC 1.X bill of material

Component

Notes

R1 (RSEL)

SMD resistor. Refer to

Table 13 and ISEL pin description in Table 2

C1, C2

> 25 V electrolytic capacitor, 100 µF is suitable.

From 470 nF to 2.2 µF ceramic capacitor. Higher values allow lower DC-DC noise.

From 100 nF to 220 nF ceramic capacitor. Higher values allow lower DC-DC noise.

C4, C7

220 nF ceramic capacitors.

STPS130A or similar schottky diode.

BAT54, BAT43, 1N5818, or any low power schottky diode with IF (AV) > 0.2 A,

VRRM > 25 V, VF < 0.5 V. To be placed as close as possible to VOUT pin.

1N4001-07, S1A-S1M, or any similar general purpose rectifier.

10 µH inductor with Isat > Ipeak where Ipeak is the boost converter peak current.

Vin

12V

to LNB

Vup

Vout

ADDR

LNBH25

{

I2C Bus

SDA

SCL

P-GND

A -GND

ISEL

R1 (RSEL)

Byp

DSQIN

Vcc

FLT

DiSEqC

Envelope

TTL

DiSEqC

22KHz

TTL

AM10431v1

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