STM8L151C2 datasheet(100/122 Pages) STMICROELECTRONICS

100 / 122 page

Electrical parameters

STM8L151x2, STM8L151x3

100/122

DocID018780 Rev 9

Figure 41. Max. dynamic current consumption on VREF+ supply pin during ADC

conversion

9.3.13

EMC characteristics

Susceptibility tests are performed on a sample basis during product characterization.

Functional EMS (electromagnetic susceptibility)

Based on a simple running application on the product (toggling 2 LEDs through I/O ports),

the product is stressed by two electromagnetic events until a failure occurs (indicated by the

LEDs).

•

ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device

until a functional disturbance occurs. This test conforms with the IEC 61000 standard.

•

FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS

through a 100 pF capacitor, until a functional disturbance occurs. This test conforms

with the IEC 61000 standard.

Table 52. RAIN max for fADC = 16 MHz

(cycles)

(µs)

RAIN max (kohm)

Slow channels

Fast channels

2.4 V < VDDA < 3.6 V 1.8 V < VDDA < 2.4 V 2.4 V < VDDA < 3.3 V 1.8 V < VDDA < 2.4 V

0.25

Not allowed

0.7

Not allowed

0.5625

0.8

Not allowed

2.0

1.0

2.0

0.8

4.0

3.0

1.5

3.0

1.8

6.0

4.5

6.8

4.0

15.0

10.0

15.0

10.0

30.0

20.0

192

32.0

25.0

50.0

40.0

384

50.0

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