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STM8SPLNB1 데이터시트(PDF) 27 Page - STMicroelectronics |
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STM8SPLNB1 데이터시트(HTML) 27 Page - STMicroelectronics |
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27 / 44 page ![]() DocID018831 Rev 5 27/44 STM8SPLNB1 Electrical characteristics 43 Electromagnetic interference (EMI) Based on a simple application running on the product (toggling 2 LEDs through the I/O ports), the product is monitored in terms of emission. This emission test is in line with the norm SAE J 1752/3 which specifies the board and the loading of each pin. Absolute maximum ratings (electrical sensitivity) Based on three different tests (ESD, LU, and DLU) using specific measurement methods, the product is stressed to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). One model can be simulated: Human body model. This test conforms to the JESD22-A114A/A115A standard. For more details, refer to the application note AN1181. Table 28. EMI data Symbol Parameter Conditions Unit General conditions Monitored frequency band fCPU(1) 1. Data based on characterization results, not tested in production. 16 MHz SEMI Peak level VDD 5 V TA 25 °C LQFP32 package Conforming to SAE J 1752/3 0.1 MHz to 30 MHz 3 dBμV 30 MHz to 130 MHz 10 130 MHz to 1 GHz 7 SAE EMI level SAE EMI level 2.5 Table 29. ESD absolute maximum ratings Symbol Ratings Conditions Class Maximum value(1) 1. Data based on characterization results, not tested in production Unit VESD(HBM) Electrostatic discharge voltage (Human body model) TA 25 °C, conforming to JESD22-A114 A 4000 V VESD(CDM) Electrostatic discharge voltage (Charge device model) TA LQFP32 package 25 °C, conforming to SD22-C101 IV 1000 |
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