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STM32F302XD 데이터시트(PDF) 89 Page - STMicroelectronics |
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STM32F302XD 데이터시트(HTML) 89 Page - STMicroelectronics |
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89 / 168 page ![]() DocID026900 Rev 4 89/168 STM32F302xD STM32F302xE Electrical characteristics 146 6.3.10 Memory characteristics Flash memory The characteristics are given at TA = –40 to 105 °C unless otherwise specified. 6.3.11 FSMC characteristics Unless otherwise specified, the parameters given in Table 45 to Table 60 for the FSMC interface are derived from tests performed under the ambient temperature, fHCLK frequency and VDD supply voltage conditions summarized in Table 19 with the following configuration: • Output speed is set to OSPEEDRy[1:0] = 11 • Capacitive load C = 30 pF • Measurement points are done at CMOS levels: 0.5VDD Refer to Section 6.3.15: I/O port characteristics: for more details on the input/output characteristics. Table 43. Flash memory characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Guaranteed by design, not tested in production. Unit tprog 16-bit programming time TA = –40 to +105 °C 40 53.5 60 µs tERASE Page (2 KB) erase time TA = –40 to +105 °C 20 - 40 ms tME Mass erase time TA = –40 to +105 °C 20 - 40 ms IDD Supply current Write mode - - 10 mA Erase mode - - 12 mA Table 44. Flash memory endurance and data retention Symbol Parameter Conditions Value Unit Min(1) 1. Data based on characterization results, not tested in production. NEND Endurance TA = –40 to +85 °C (6 suffix versions) TA = –40 to +105 °C (7 suffix versions) 10 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 2. Cycling performed over the whole temperature range. 30 Years 1 kcycle(2) at TA = 105 °C 10 10 kcycle(2) at TA = 55 °C 20 |
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