STM32F302XD datasheet(144/168 Pages) STMICROELECTRONICS

144 / 168 page

Electrical characteristics

STM32F302xD STM32F302xE

144/168

DocID026900 Rev 4

PGA gain

Non inverting gain value

-2

-4

-8

-16

Rnetwork

R2/R1 internal resistance values in

PGA mode (3)

Gain=2

5.4/5.4

Gain=4

16.2/5.4

Gain=8

37.8/5.4

Gain=16

40.5/2.7

PGA gain error

-1%

Ibias

OPAMP input bias current

±0.2(4)

µA

PGA BW

PGA bandwidth for different non

inverting gain

PGA Gain = 2,

Cload = 50pF,

Rload = 4 K

-4

MHz

PGA Gain = 4,

Cload = 50pF,

Rload = 4 K

-2

PGA Gain = 8,

Cload = 50pF,

Rload = 4 K

-1

PGA Gain = 16,

Cload = 50pF,

Rload = 4 K

-0.5

Voltage noise density

@ 1KHz, Output

loaded with

4 K

109

@ 10KHz,

Output loaded

with 4 K

-43

1. Guaranteed by design, not tested in production.

2. The saturation voltage can be also limited by the Iload (drive current).

3. R2 is the internal resistance between OPAMP output and OPAMP inverting input.

R1 is the internal resistance between OPAMP inverting input and ground.

The PGA gain =1+R2/R1

4. Mostly TTa I/O leakage, when used in analog mode.

Table 88. Operational amplifier characteristics(1) (continued)

Symbol

Parameter

Condition

Min

Typ

Max

Unit

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