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STM32L100RB 데이터시트(PDF) 81 Page - STMicroelectronics

부품명 STM32L100RB
상세설명  Ultra-low-power platform
PDF  103 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STM32L100RB 데이터시트(HTML) 81 Page - STMicroelectronics

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STM32L100C6 STM32L100R8/RB
Electrical characteristics
90
Figure 21. USB timings: definition of data signal rise and fall time
Table 50. USB DC electrical characteristics
Symbol
Parameter
Conditions
Min.(1)
1. All the voltages are measured from the local ground potential.
Max.(1)
Unit
Input levels
VDD
USB operating voltage(2)
2. To be compliant with the USB 2.0 full speed electrical specification, the USB_DP (D+) pin should be pulled
up with a 1.5 k
Ω resistor to a 3.0-to-3.6 V voltage range.
-3.0
3.6
V
VDI(3)
3. Guaranteed by characterization results.
Differential input sensitivity
I(USB_DP, USB_DM)
0.2
-
V
VCM(3)
Differential common mode range Includes VDI range
0.8
2.5
VSE(3)
Single ended receiver threshold
-
1.3
2.0
Output levels
VOL(4)
4. Guaranteed by test in production.
Static output level low
RL of 1.5 kΩ to 3.6 V(5)
5. RL is the load connected on the USB drivers.
-0.3
V
VOH(4)
Static output level high
RL of 15 kΩ to VSS(5)
2.8
3.6
Table 51. USB: full speed electrical characteristics
Driver characteristics(1)
1. Guaranteed by design.
Symbol
Parameter
Conditions
Min
Max
Unit
tr
Rise time(2)
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification section 7 (version 2.0).
CL = 50 pF
420
ns
tf
Fall Time(2)
CL = 50 pF
4
20
ns
trfm
Rise/ fall time matching
tr/tf
90
110
%
VCRS
Output signal crossover voltage
-
1.3
2.0
V



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