STM32L100RB datasheet(48/103 Pages) STMICROELECTRONICS

48 / 103 page

Electrical characteristics

STM32L100C6 STM32L100R8/RB

48/103

DocID024295 Rev 5

6.3.4

Supply current characteristics

The current consumption is a function of several parameters and factors such as the

operating voltage, ambient temperature, I/O pin loading, device software configuration,

operating frequencies, I/O pin switching rate, program location in memory and executed

binary code. The current consumption is measured as described in Figure 10: Current

consumption measurement scheme.

All Run-mode current consumption measurements given in this section are performed with a

reduced code that gives a consumption equivalent to Dhrystone 2.1 code, unless otherwise

specified.

The current consumption values are derived from the tests performed under ambient

temperature TA=25°C and VDD supply voltage conditions summarized in Table 12: General

operating conditions, unless otherwise specified.

Maximum current consumption

The MCU is placed under the following conditions:

•

VDD = 3.6 V

•

All I/O pins are in input mode with a static value at VDD or VSS (no load).

•

All peripherals are disabled except when explicitly mentioned.

•

The Flash memory access time is adjusted depending on fHCLK frequency and voltage

range.

•

Prefetch and 64-bit access are enabled in configurations with 1 wait state.

•

When the peripherals are enabled fAPB1 = fAPB2 = fAHB.

•

When fHCLK > 8 MHz, PLL is ON and PLL inputs are equal to HSI = 8 MHz (if internal

clock is used) or HSE = 8 MHz (if HSE bypass mode is used).

STM32L100RB 데이터시트(PDF) 48 Page - STMicroelectronics