AS6C1608 datasheet(2/13 Pages) ALSC

2 / 13 page

AS6C1608

Rev. 1.1

2048K X 8 BIT LOW POWER CMOS SRAM

Alliance Memory Inc.reserves the rights to change the specifications and products without notice.

Alliance Memory, Inc.

551 Taylor Way, Suite #1, San Carlos, CA 94070, USA

Tel: +1 650 610 6800 Fax: +1 650 620 9211

FEATURES



Fast access time : 55/70ns



Low power consumption:

Operating current : 45/30mA (TYP.)

Standby current : 4

A (TYP.) SL-version



Single 2.7V ~ 3.6V power supply



All inputs and outputs TTL compatible



Fully static operation



Tri-state output



Data retention voltage : 1.2V (MIN.)



Green package available



Package : 44-pin 400 mil TSOP-II

48-ball 8mm x 10mm TFBGA

GENERAL DESCRIPTION

The AS6C1608 is a 16,777,216-bit low power

CMOS static random access memory organized as

2,097,152 words by 8 bits. It is fabricated using very

high performance, high reliability CMOS technology.

Its standby current is stable within the range of

operating temperature.

The AS6C1608 is well designed for very low power

system applications, and particularly well suited for

battery back-up nonvolatile memory application.

The AS6C1608 operates from a single power

supply of 2.7V ~ 3.6V and all inputs and outputs are

fully TTL compatible

PRODUCT FAMILY

Product

Family

Operating

Temperature

Vcc Range

Speed

Power Dissipation

Standby(ISB1,TYP.) Operating(Icc,TYP.)

AS6C1608(I)

-40 ~ 85℃

2.7 ~ 3.6V

55/70ns

4µA(SL)

45/30mA

FUNCTIONAL BLOCK DIAGRAM

DECODER

I/O DATA

CIRCUIT

CONTROL

CIRCUIT

2048Kx8

MEMORY ARRAY

COLUMN I/O

A0-A20

Vcc

Vss

DQ0-DQ7

CE#

WE#

OE#

CE2

PIN DESCRIPTION

SYMBOL

DESCRIPTION

A0 – A20

Address Inputs

DQ0 – DQ7

Data Inputs/Outputs

CE#, CE2

Chip Enable Inputs

WE#

Write Enable Input

OE#

Output Enable Input

VCC

Power Supply

VSS

Ground

No Connection

PIN CONFIGURATION

AS6C1608 데이터시트(PDF) 2 Page - Alliance Semiconductor Corporation

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