AS6C1608

Rev. 1.1

2048K X 8 BIT LOW POWER CMOS SRAM

Alliance Memory, Inc.

551 Taylor Way, Suite #1, San Carlos, CA 94070, USA

Tel: +1 650 610 6800 Fax: +1 650 620 9211

4

DC ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

*4

MAX.

UNIT

Supply Voltage

2.7

3.0

3.6

V

Input High Voltage

*1

2.2

-

V

Input Low Voltage

*2

- 0.2

-

0.6

V

Input Leakage Current

- 1

-

1

µA

Output Leakage

Current

Output Disabled

- 1

-

1

µA

Output High Voltage

2.2

2.7

-

V

Output Low Voltage

-

-

0.4

V

Average Operating

Power supply Current

Cycle time = Min.

- 55

-

45

60

mA

- 70

-

30

45

mA

Cycle time = 1µs

-

8

16

mA

Standby Power

Supply Current

-

0.3

2

mA

CE#

or CE2≦0.2V

Other pins at 0.2V

SL

*5

SLI

*5

25℃

-

4

10

µA

40℃

-

4

10

µA

SL

-

4

30

µA

SLI

-

4

40

µA

Notes:

3. Over/Undershoot specifications are characterized on engineering evaluation stage, not for mass production test.

4. Typical values are included for reference only and are not guaranteed or tested.

5. This parameter is measured at VCC = 3.0V

PARAMETER

SYMBOL

MIN.

MAX

UNIT

Input Capacitance

-

6

pF

Input/Output Capacitance

-

8

pF

Note : These parameters are guaranteed by device characterization, but not production tested.

AC TEST CONDITIONS

Input Pulse Levels

Input Rise and Fall Times

3ns

Input and Output Timing Reference Levels

1.5V

Output Load