| 전자부품 데이터시트 검색엔진 |
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AS6C1608 데이터시트(PDF) 4 Page - Alliance Semiconductor Corporation |
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AS6C1608 데이터시트(HTML) 4 Page - Alliance Semiconductor Corporation |
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4 / 13 page ![]() AS6C1608 Rev. 1.1 2048K X 8 BIT LOW POWER CMOS SRAM Alliance Memory Inc.reserves the rights to change the specifications and products without notice. Alliance Memory, Inc. 551 Taylor Way, Suite #1, San Carlos, CA 94070, USA Tel: +1 650 610 6800 Fax: +1 650 620 9211 3 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT Voltage on VCC relative to VSS VT1 -0.5 to 4.6 V Voltage on any other pin relative to VSS VT2 -0.5 to VCC+0.5 V Operating Temperature TA -40 to 85(I grade) ℃ Storage Temperature TSTG -65 to 150 ℃ Power Dissipation PD 1 W DC Output Current IOUT 50 mA *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE MODE CE# CE2 OE# WE# I/O OPERATION SUPPLY CURRENT Standby H X X X High-Z ISB,ISB1 X L X X High-Z ISB,ISB1 Output Disable L H H H High-Z ICC,ICC1 Read L H L H DOUT ICC,ICC1 Write L H X L DIN ICC,ICC1 Note: H = VIH, L = VIL, X = Don't care. |
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