GBPC3512 datasheet(2/6 Pages) IRF

2 / 6 page

GBPC.. Series

Bulletin I27505 rev. E 02/01

www.irf.com

Maximum DC output current

Resistive or inductive load

Capacitive load

@ Case temperature

°C

FSM

Maximum peak, one-cycle

400

475

t = 10ms

No voltage

Initial T

J =TJmax.

non-repetitive forward current

420

500

t = 8.3ms reapplied

335

400

t = 10ms

100% V

RRM

350

420

t = 8.3ms reapplied

I2t

Maximum I2t for fusing

790

1130

A2s

t = 10ms

No voltage

725

1030

t = 8.3ms reapplied

560

800

t = 10ms

100% V

RRM

512

730

t = 8.3ms reapplied

√t

Maximum I2

√t for fusing

7.9

11.3

KA2

√sI2t for time t

x = I

√t x √t

x ;

0.1

≤ tx ≤ 10ms, VRRM = 0V

VF(TO)1 Low-level of threshold voltage

0.76

0.77

(16.7% x

π x I

F(AV) < I < π x IF(AV)), @ TJ max.

F(TO)2

High-level of threshold voltage

0.89

0.92

(I >

π x IF(AV)), @ T

J max.

Low-level forward slope resistance

8.2

4.852

Ω

(16.7% x

π x I

F(AV) < I < π x IF(AV)), @ TJ max.

High-level forward slope resistance

6.8

3.867

(I >

π x IF(AV)), @ T

J max.

Maximum forward voltage drop

1.1

J = 25

C, I

FM = IFavg (arm)

IRRM

Max. DC reverse current

5.0

µAT

J = 25

C, per diode at VRRM

VINS

RMS isolation voltage base plate

2700

f = 50 Hz, t = 1s

Forward Conduction

Voltage

RRM , max repetitive

RSM , max non-repetitive

RRMmax.

Type number

Code

peak AC rev. voltage

@ rated V

RRM

D.C. rev. curr.

J = TJ max.

@ T= 125°C

(µA)

200

275

500

GBPC25/35..A

400

500

GBPC25/35..W

600

725

500

(*)

800

900

500

1000

1100

500

1200

1300

500

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Parameters

GBPC25

GBPC35

Units Conditions

(*) please see Ordering Information Table - page 3

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