QPD1025LS2 datasheet(3/18 Pages) TRIQUINT

부품명	QPD1025LS2

상세설명	1500 W, 65 V, 1.0 ??1.1 GHz, GaN RF Input-Matched Transistor

PDF	18 Pages

Scroll/Zoom	100%

제조업체	TRIQUINT [TriQuint Semiconductor]

홈페이지	http://www.triquint.com

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3 / 18 page

QPD1025L

1500 W, 65 V, 1.0

– 1.1 GHz, GaN RF Input-Matched Transistor

Datasheet Rev. B

│ Subject to change without notice

- 3 of 18 -

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RF Characterization

– 1.0 – 1.1 GHz EVB Performance at 1.05 GHz 1

Parameter

Min

Typ

Max

Units

Linear Gain, GLIN

–

21.2

–

Output Power at 3dB compression point, P3dB

–

1461

–

Drain Efficiency at 3dB compression point,

DEFF3dB

–

73.2

–

Gain at 3dB compression point, G3dB

–

18.2

–

Notes:

VD = 65

V, IDQ = 1.5 A (combined), Temp = +25 °C, Pulse Width = 100 us, Duty Cycle = 10%

RF Characterization

– Mismatch Ruggedness at 1.0 GHz 1, 2, 3

Symbol Parameter

dB Compression

Typical

VSWR

Impedance Mismatch Ruggedness

10:1

Notes

Test conditions unless otherwise noted: TA = 25 °C, VD = 65 V, IDQ = 1.5 A (combined)

Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector

Pulse: 100us, 10% Duty cycle

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