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QPD1025LS2 데이터시트(PDF) 1 Page - TriQuint Semiconductor |
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QPD1025LS2 데이터시트(HTML) 1 Page - TriQuint Semiconductor |
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1 / 18 page ![]() QPD1025L 1500 W, 65 V, 1.0 – 1.1 GHz, GaN RF Input-Matched Transistor Datasheet Rev. B │ Subject to change without notice - 1 of 18 - www.qorvo.com 4-lead NI-1230 Package (Eared) Product Overview The Qorvo QPD1025L is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.0 to 1.1 GHz. Input pre- match within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations. Lead-free and ROHS compliant Evaluation boards are available upon request. Functional Block Diagram Key Features • Frequency: 1.0 to 1.1 GHz • Output Power (P3dB)1: 1660 W • Linear Gain1: 22.9 dB • Typical PAE3dB1: 78.5% • Operating Voltage: 65 V • CW and Pulse capable Note 1: @ 1.0 GHz Load Pull Applications • IFF Transponders • Avionics Ordering info Part No. ECCN Description QPD1025L EAR99 1.0 – 1.1 GHz Transistor QPD1025LS2 EAR99 2 Piece Sample Bag QPD1025LEVB1 EAR99 1.0 – 1.1 GHz Evaluation Board |
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