1 Features
• Dual channel, CMOS output functional isolators
• 50Mbps data rate
• Robust SiO2 isolation barrier with ±150kV/μs
typical CMTI
• Functional Isolation (8-REU):
– 200VRMS, 280VDC working voltage
– 570VRMS, 800VDC transient voltage (60s)
• Functional Isolation (8-D):
– 450VRMS, 637VDC working voltage
– 707VRMS, 1000VDC transient voltage (60s)
• Available in a compact 8-REU package with
>2.2mm creepage
• Wide supply range: 1.71V to 1.89V and 2.25V to
5.5V
• 1.71V to 5.5V level translation
• Default output High (ISO652x) and Low
(ISO652xF) Options
• Wide temperature range: –40°C to 125°C
• 1.8mA per channel typical at 1Mbps at 3.3V
• Low propagation delay: 11ns typical at 3.3V
• Robust electromagnetic compatibility (EMC)
– System-Level ESD, EFT, and surge immunity
– Ultra-low emissions
• Leadless-DFN (8-REU) package and Narrow-
SOIC (8-D) package options

2 Applications
• Power supplies
• Grid, Electricity meter
• Motor drives
• Factory automation
• Building automation
• Lighting
• Appliances

3 Description
The ISO652x devices are high-performance, dualchannel
functional isolators designed for cost
sensitive, space constrained applications that require
isolation for non-safety applications. The isolation
barrier supports a working voltage of 200VRMS /
280VDC and transient over voltages of 570VRMS /
800VDC.
The devices provide high electromagnetic immunity
and low emissions at low power consumption, while
isolating CMOS or LVCMOS digital I/Os. Each
isolation channel has a logic input and output buffer
separated by TI's double capacitive silicon dioxide
(SiO2) insulation barrier. ISO6520 has two isolation
channels with both channels in the same direction.
ISO6521 has two isolation channels with one channel
in each direction. In the event of input power or signal
loss, the default output is high for devices without
suffix F and low for devices with suffix F. See Device
Functional Modes section for further details.
These devices help prevent noise currents on data
buses, such as UART, SPI, RS-485, RS-232, and
CAN from damaging sensitive circuitry. Through chip
design and layout techniques, the electromagnetic
compatibility of the devices have been significantly
enhanced to ease system-level ESD and emissions
compliance.