AL5802_14 datasheet(3/11 Pages) DIODES

3 / 11 page

AL5802

Document number: DS35516 Rev. 9 - 2

3 of 11

www.diodes.com

March 2014

AL5802

Package Thermal Data

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5) @ TA = +25°C

Power Dissipation (Note 6) @ TA = +25°C

Power Dissipation (Note 7) @ TA = +25°C

0.37

0.87

Thermal Resistance, Junction to Ambient Air (Note 5) @ TA = +25°C

Thermal Resistance, Junction to Ambient Air (Note 6) @ TA = +25°C

Thermal Resistance, Junction to Ambient Air (Note 7) @ TA = +25°C

RθJA

335

143

120

°C/W

Notes:

5. Device mounted on FR-4 PCB, 2oz with minimum recommended pad layout.

6. Device mounted on 25mm x 25mm 2oz copper board.

7. Device mounted on 50mm x 50mm 2oz copper board.

Recommended Operating Conditions

Symbol

Parameter

Min

Max

Unit

VBIAS

Supply voltage range

4.5

VOUT

OUT voltage range

0.8

ILED

LED pin current (Note 8)

120

Operating ambient temperature range

-40

+125

°C

Note:

8. Subject to ambient temperature, power dissipation and PCB.

Electrical Characteristics – NPN Transistor – Q1 (@TA = +25°C, unless otherwise specified.)

Symbol

Characteristic

Test Condition

Min

Typ

Max

Unit

V(BR)CEO

Collector-Emitter Breakdown Voltage (Note 9)

IC = 1.0mA, IB = 0

—

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 10µA, IC = 0

6.0

—

ICEX

Collector Cutoff Current

VCE = 30V, VEB(OFF) = 3.0V

—

IBL

Base Cutoff Current

VCE = 30V, VEB(OFF) = 3.0V

—

hFE

DC Current Gain

IC = 100µA, VCE = 1.0V

IC = 1.0mA, VCE = 1.0V

IC = 10mA, VCE = 1.0V

100

—

300

—

VCE(SAT)

Collector-Emitter Saturation Voltage (Note 9)

IC = 10mA, IB = 1.0mA

—

0.20

VBE(SAT)

Base-Emitter Saturation Voltage

IC = 10mA, IB = 1.0mA

0.65

—

0.85

Electrical Characteristics – NPN Pre-biased Transistor – Q2 (@TA = +25°C, unless otherwise specified.)

Symbol

Characteristic

Test Condition

Min

Typ

Max

Unit

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 50μA, IE = 0

—

V(BR)CEO

Collector-Emitter Breakdown Voltage (Note 9)

IC = 1mA, IB = 0

—

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 50μA, IC = 0

5.0

—

ICBO

Collector Cut-Off Current

VCB = 30V, IE = 0

—

0.5

µA

IEBO

Emitter Cut-Off Current

VEB = 4V, IC = 0

—

0.5

µA

VCE(SAT)

Collector-Emitter Saturation Voltage (Note 9)

IC = 10mA, IB = 1mA

—

0.3

hFE

DC Current Gain (Note 9)

VCE = 5V, IC = 150mA

100

—

Input Resistance

—

kΩ

*Characteristics of transistor only.

Note:

9. Short duration pulse test used to minimize self-heating effect.

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