Document Number: 001-87220 Rev. *J

Page 29 of 43

Datasheet

Memory

System Resources

Power-on-Reset (POR) with Brown Out

Table 26. Flash DC Specifications

Spec ID

Parameter

Description

Min

Typ

Max

Units

Details/Conditions

SID173

Erase and program voltage

1.71

–

5.5

V

Note

3. It can take as much as 20 milliseconds to write to Flash. During this time the device should not be Reset, or Flash operations will be interrupted and cannot be relied

on to have completed. Reset sources include the XRES pin, software resets, CPU lockup states and privilege violations, improper power supply levels, and watchdogs.

Make certain that these are not inadvertently activated.

Table 27. Flash AC Specifications

Spec ID

Parameter

Description

Min

Typ

Max

Units

Details/Conditions

SID174

Row (block) write time (erase and

program)

–

–

20

ms

Row (block) = 128 bytes

SID175

Row erase time

–

–

13

ms

SID176

–

–

7

ms

SID178

Bulk erase time (32 KB)

–

–

35

ms

SID180

Total device program time

–

–

7

seconds Guaranteed by charac-

terization

SID181

Flash endurance

100 K

–

–

cycles

Guaranteed by charac-

terization

SID182

P/E cycles

20

–

–

years

Guaranteed by charac-

terization

SID182A

P/E cycles

10

–

–

years

Guaranteed by charac-

terization

SID182B

P/E cycles,

 three years at TA ≥

85 °C

10

–

20

years

Guaranteed by charac-

terization

Table 28. Imprecise Power On Reset (IPOR)

Spec ID

Parameter

Description

Min

Typ

Max

Units

Details/Conditions

SID185

Rising trip voltage

0.80

–

1.45

V

Guaranteed by character-

ization

SID186

Falling trip voltage

0.75

–

1.4

V

Guaranteed by character-

ization

SID187

Hysteresis

15

–

200

mV

Guaranteed by character-

ization

Table 29. Precise Power On Reset (POR)

Spec ID

Parameter

Description

Min

Typ

Max

Units

Details/Conditions

SID190

BOD trip voltage in active and

sleep modes

1.64

–

–

V

Full functionality between

1.71 V and BOD trip

voltage is guaranteed by

characterization

SID192

BOD trip voltage in Deep Sleep

1.4

–

–

V

Guaranteed by character-

ization

BID55

Svdd

Maximum power supply ramp

rate

––

67

kV/sec