M58LT128GS datasheet(47/98 Pages) STMICROELECTRONICS

47 / 98 page

M58LT128GST, M58LT128GSB

9 Program and Erase times and Endurance cycles

47/98

Program and Erase times and Endurance cycles

The Program and Erase times and the number of Program/ Erase cycles per block are shown in

Table 16 Exact erase times may change depending on the memory array condition. The best

case is when all the bits in the block are at ‘0’ (pre-programmed). The worst case is when all the

bits in the block are at ‘1’ (not preprogrammed). Usually, the system overhead is negligible with

respect to the erase time. In the M58LT128GST and M58LT128GSB the maximum number of

Program/Erase cycles depends on the VPP voltage supply used.

Table 16.

Program/Erase Times and Endurance Cycles

Parameter

Condition(1)(2)

Min

Typ

Typical

after

100kW/E

Cycles

Max

Unit

Erase

Parameter Block (16 KWord)

0.4

2.5

Main Block (64

KWord)

Preprogrammed

Not Preprogrammed

1.2

Program(3)

SIngle Cell

Word Program

µs

Buffer Program

µs

Single Word

Word Program

180

µs

Buffer Program

180

µs

Buffer (32 Words) (Buffer Program)

440

880

µs

Main Block (64 KWord)

880

Suspend Latency

Program

µs

Erase

µs

Program/Erase

Cycles (per Block)

Main Blocks

100,000

cycles

Parameter Blocks

100,000

cycles

M58LT128GS 데이터시트(PDF) 47 Page - STMicroelectronics

M58LT128GS 데이터시트(HTML) 47 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98

데이터시트 다운로드

링크 URL