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STM32L552CCT3PTR 데이터시트(PDF) 145 Page - STMicroelectronics |
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STM32L552CCT3PTR 데이터시트(HTML) 145 Page - STMicroelectronics |
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145 / 340 page ![]() DS12737 Rev 6 145/340 STM32L552xx Electrical characteristics 307 VBAT Backup operating voltage - 1.55 3.6 V VDDUSB USB supply voltage USB used 3.0 3.6 V USB not used 0 3.6 VIN I/O input voltage TT_xx I/O -0.3 VDDIOx+0.3 V FT_c I/O -0.3 5 All I/O except FT_c and TT_xx -0.3 MIN(MIN(VDD, VDDA, VDDIO2, VDDUSB) +3.6 V, 5.5 V)(3)(4) PD Power dissipation at TA = 85 °C for suffix 6(5) LQFP48 See Section 6.8: Thermal characteristics for application appropriate thermal resistance and package. Power dissipation is then calculated according ambient temperature (TA) and maximum junction temperature (TJ) and selected thermal resistance. mW UFQFPN48 LQFP64 WLCSP81 LQFP100 UFBGA132 LQFP144 PD Power dissipation at TA = 125 °C for suffix 3(5) LQFP48 See Section 6.8: Thermal characteristics for application appropriate thermal resistance and package. Power dissipation is then calculated according ambient temperature (TA) and maximum junction temperature (TJ) and selected thermal resistance. mW UFQFPN48 LQFP64 WLCSP81 LQFP100 UFBGA132 LQFP144 Table 27. General operating conditions (continued) Symbol Parameter Conditions Min Max Unit |
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