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STM32L552CCT3PTR 데이터시트(PDF) 148 Page - STMicroelectronics

부품명 STM32L552CCT3PTR
상세설명  Ultra-low-power Arm® Cortex®-M33 32-bit MCUTrustZone®FPU, 165 DMIPS, up to 512 KB Flash memory, 256 KB SRAM, SMPS
PDF  340 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32L552CCT3PTR 데이터시트(HTML) 148 Page - STMicroelectronics

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Electrical characteristics
STM32L552xx
148/340
DS12737 Rev 6
5.3.3
Operating conditions at power-up / power-down
The parameters given in Table 30 are derived from tests performed under the ambient
temperature condition summarized in Table 27.
5.3.4
Embedded reset and power control block characteristics
The parameters given in Table 31 are derived from tests performed under the ambient
temperature conditions summarized in Table 27: General operating conditions.
Table 30. Operating conditions at power-up / power-down(1)
1.
At power-up, the VDD12 voltage should not be forced externally.
Symbol
Parameter
Conditions
Min
Max
Unit
tVDD
VDD rise time rate
-
0
∞
µs/V
VDD fall time rate
10
∞
tVDDA
VDDA rise time rate
-
0
∞
VDDA fall time rate
10
∞
tVDDUSB
VDDUSB rise time rate
-
0
∞
VDDUSB fall time rate
10
∞
tVDDIO2
VDDIO2 rise time rate
-
0
∞
VDDIO2 fall time rate
10
∞
Table 31. Embedded reset and power control block characteristics
Symbol
Parameter
Conditions(1)
Min
Typ
Max
Unit
tRSTTEMPO(2)
Reset temporization after
BOR0 is detected
VDD rising
-
250
400
μs
VBOR0(2)
Brown-out reset threshold 0
Rising edge
1.62
1.66
1.7
V
Falling edge
1.6
1.64
1.69
VBOR1
Brown-out reset threshold 1
Rising edge
2.06
2.1
2.14
V
Falling edge
1.96
2
2.04
VBOR2
Brown-out reset threshold 2
Rising edge
2.26
2.31
2.35
V
Falling edge
2.16
2.20
2.24
VBOR3
Brown-out reset threshold 3
Rising edge
2.56
2.61
2.66
V
Falling edge
2.47
2.52
2.57
VBOR4
Brown-out reset threshold 4
Rising edge
2.85
2.90
2.95
V
Falling edge
2.76
2.81
2.86
VPVD0
Programmable voltage
detector threshold 0
Rising edge
2.1
2.15
2.19
V
Falling edge
2
2.05
2.1
VPVD1
PVD threshold 1
Rising edge
2.26
2.31
2.36
V
Falling edge
2.15
2.20
2.25



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