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M28F420 데이터시트(PDF) 11 Page - STMicroelectronics

부품명 M28F420
상세설명  4 Megabit (x8 or x16, Block Erase) FLASH MEMORY
PDF  38 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M28F420 데이터시트(HTML) 11 Page - STMicroelectronics

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background image
Symbol
Alt
Parameter
M28F410 / 20
Unit
-80
-90
-100
-120
VCC =5V
± 5% VCC =5V ± 10% VCC =5V ± 10% VCC =5V ± 10%
SRAM
Interface
EPROM
Interface
EPROM
Interface
EPROM
Interface
Min
Max
Min
Max
Min
Max
Min
Max
tAVAV
tRC
Address Valid to
Next Address Valid
80
90
100
120
ns
tAVQV
tACC
Address Valid to
Output Valid
80
90
100
120
ns
tPHQV
tPWH
Power Down High
to Output Valid
300
300
300
300
ns
tELQX
(2)
tLZ
Chip Enable Low to
Output Transition
000
0
ns
tELQV
(3)
tCE
Chip Enable Low to
Output Valid
80
90
100
120
ns
tGLQX
(2 )
tOLZ
Output Enable Low
to Output Transition
000
0
ns
tGLQV
(3 )
tOE
Output Enable Low
to Output Valid
40
45
50
55
ns
tEHQX
(2)
tOH
Chip Enable High
to Output Transition
000
0
ns
tEHQZ
(2 )
tHZ
Chip Enable High
to Output Hi-Z
30
35
40
45
ns
tGHQX
(2)
tOH
Output Enable High
to Output Transition
000
0
ns
tGHQZ
(2)
tDF
Output Enable High
to Output Hi-Z
30
35
40
45
ns
tAXQX
(2 )
tOH
Address Transition
to Output Transition
000
0
ns
Notes: 1. See Figure 3 and Table 8 for timing measurements.
2. Sampled only, not 100% tested.
3. G may be delayed by up to tELQV -tGLQV after the falling edge of E without increasing tELQV.
Table 14. Read AC Characteristics (1)
(TA = –40 to 125
°C; VPP = 12V ± 5%)
11/38
M28F410, M28F420



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