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M28F420 데이터시트(PDF) 17 Page - STMicroelectronics

부품명 M28F420
상세설명  4 Megabit (x8 or x16, Block Erase) FLASH MEMORY
PDF  38 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M28F420 데이터시트(HTML) 17 Page - STMicroelectronics

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background image
Symbol
Alt
Parameter
M28F410 / 20
Unit
-80
-90
VCC =5V
± 5%
VCC =5V
± 10%
SRAM
Interface
EPROM
Interface
Min
Max
Min
Max
tAVAV
tWC
Write Cycle Time
80
90
ns
tPHWL
tPS
Power Down High to Write Enable Low
210
210
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
0
0
ns
tWLWH
tWP
Write Enable Low to Write Enable High
50
60
ns
tDVWH
tDS
Data Valid to Write Enable High
50
60
ns
tWHDX
tDH
Write Enable High to Data Transition
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
10
10
ns
tWHWL
tWPH Write Enable High to Write Enable Low
30
40
ns
tAVWH
tAS
Address Valid to Write Enable High
50
60
ns
tPHHWH
(5 )
tPHS
Power Down VHH (Boot Block Unlock) to Write
Enable High
100
100
ns
tVPHWH
(5)
tVPS
VPP High to Write Enable High
100
100
ns
tWHAX
tAH
Write Enable High to Address Transition
10
10
ns
tWHQV1
(2, 3)
Write Enable High to Output Valid (Word/Byte
Program)
67
μs
tWHQV2
(2, 3)
Write Enable High to Output Valid (Boot Block
Erase)
0.3
0.4
sec
tWHQV3
(2)
Write Enable High to Output Valid (Parameter
Block Erase)
0.3
0.4
sec
tWHQV4
(2)
Write Enable High to Output Valid (Main Block
Erase)
0.6
0.7
sec
tQVPH
(5)
tPHH Output Valid to Reset/Power Down High
0
0
ns
tQVVPL
(5 )
Output Valid to VPP Low
0
0
ns
tPHBR
(4, 5)
Reset/Power Down High to Boot Block Relock
100
100
ns
Notes: 1. See Figure 3 and Table 8 for timing measurements.
2. Time is measured to Status Register Read giving bit b7 = ’1’.
3. For Program or Erase of the Boot Block RP must be at VHH.
4. Time required for Relocking the Boot Block.
5. Sampled only, not 100% tested.
Table 18A. Write AC Characteristics, Write Enable Controlled (1)
(TA = –40 to 125
°C; VPP = 12V ± 5%)
17/38
M28F410, M28F420



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