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01304C6 데이터시트(PDF) 3 Page - Infineon Technologies AG |
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01304C6 데이터시트(HTML) 3 Page - Infineon Technologies AG |
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3 / 13 page ![]() 3 OptiMOSTMPower-MOSFET,40V IQE013N04LM6CG Rev.2.0,2020-07-15 Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current 1) ID - - - - - - - - - - 205 145 170 120 31 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=60K/W2) Pulsed drain current 3) ID,pulse - - 820 A TC=25°C Avalanche current, single pulse 4) IAS - - 50 A TC=25°C Avalanche energy, single pulse EAS - - 255 mJ ID=20A,RGS=25 Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - - - 107 2.5 W TC=25°C TA=25°C,RthJA=60K/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 1.4 K/W - Device on PCB, 6 cm 2 cooling area2) RthJA - - 60 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information |
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