27291SL datasheet(3/20 Pages) NXP

3 / 20 page

NXP Semiconductors

Data Sheet: Technical Data

3/20

A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021

Table 5. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS =28 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

1.4

—

Output Capacitance

(VDS =28 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Coss

—

30.9

—

Input Capacitance

(VDS =28 Vdc, VGS =0 Vdc  30 mV(rms)ac @ 1 MHz)

Ciss

—

68.3

—

Functional Tests (In NXP Production Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 450 mA, Pout = 15 W Avg., f = 880 MHz,

Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz

Channel Bandwidth @ 5MHz Offset.

Power Gain

Gps

22.0

22.8

25.0

Drain Efficiency

D

32.4

33.8

—

Adjacent Channel Power Ratio

ACPR

—

–38.0

–33.0

dBc

Input Return Loss

IRL

—

–19

–9

Load Mismatch/Ruggedness — 880 MHz (In NXP Production Test Fixture, 50 ohm system) IDQ = 450 mA

Frequency

(MHz)

Signal

Type

VSWR

(W)

Test Voltage, VDD

Result

880

> 10:1

at all Phase Angles

1.3

(3 dB Overdrive)

No Device

Degradation

Load Mismatch/Ruggedness — 136 MHz (In NXP Reference Circuit, 50 ohm system) IDQ = 450 mA

Frequency

(MHz)

Signal

Type

VSWR

(W)

Test Voltage, VDD

Result

136

>5:1

at all Phase Angles

0.2

(3 dB Overdrive)

No Device

Degradation

Table 6. Ordering Information

Device

Tape and Reel Information

Package

A3T09S100NR1

R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel

TO--270--2

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