27291SL datasheet(7/20 Pages) NXP

7 / 20 page

NXP Semiconductors

Data Sheet: Technical Data

7/20

A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021

Typical Characteristics — 880 MHz Production Test Fixture

Figure 6. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance

@Pout = 15 Watts Avg.

820

ACPR

f, FREQUENCY (MHz)

--20

--5

--10

--15

19.5

24.5

23.5

--37

--27

--29

--31

--33

22.5

21.5

20.5

840

860

880

900

920

940

960

980

--35

--25

PARC

VDD =28 Vdc,Pout = 15 W(Avg.)

IDQ = 450 mA, Single--Carrier W--CDMA

IRL

--3

--1

--1.5

--2

--2.5

--3.5

Gps

3.84 MHz Channel Bandwidth

Input Signal PAR = 9.9 dB

@ 0.01% Probability on CCDF

D

--75

--15

--30

--60

0.1

--45

VDD =28 Vdc,Pout = 64 W (PEP)

IDQ = 450 mA, Two--Tone Measurements

(f1 + f2)/2 = Center Frequency of 880 MHz

IM5--U

IM7--U

IM7--L

IM3--L

IM3--U

IM5--L

TWO--TONE SPACING (MHz)

Figure 7. Intermodulation Distortion Products versus Two--Tone Spacing

Figure 8. Output Peak--to--Average Ratio Compression (PARC) versus Output Power

Pout, OUTPUT POWER (WATTS)

--1

--3

--2

--4

515

D

ACPR

PARC

--45

--15

--20

--25

--35

--30

--40

22.9

22.8

22.7

22.6

22.5

22.4

Gps

--5

VDD =28 Vdc,IDQ = 450 mA, f = 880 MHz, Single--Carrier W--CDMA

–1 dB = 10.5 W

3.84 MHz Channel Bandwidth

Input Signal PAR = 9.9 dB

@ 0.01% Probability on CCDF

–2 dB = 15.2 W

–3 dB = 20.8 W

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