27291SL datasheet(13/20 Pages) NXP

13 / 20 page

NXP Semiconductors

Data Sheet: Technical Data

13 / 20

A3T09S100N Airfast RF Power LDMOS Transistor, Rev. 0, March 2021

Typical Characteristics — 136 MHz Reference Circuit

Figure 14. Output Power versus Gate--Source Voltage

Detail A

VGS, GATE--SOURCE VOLTAGE (VOLTS)

0.5

0.75

1.25

VGS, GATE--SOURCE VOLTAGE (VOLTS)

120

Detail A

3.5

100

Pin = 0.125 W

11.5

VDD = 28 Vdc, f = 136 MHz, CW

0.5

1.5

2.5

Pin = 0.0625 W

0.25

Pin = 0.125 W

Pin = 0.0625 W

VDD =28 Vdc

f = 136 MHz, CW

Pin, INPUT POWER (WATTS)

Gps

Pout

VDD =28 Vdc,IDQ = 450 mA, f = 136 MHz, CW

0.05

0.25

0.1

0.15

0.2

100

120

D

Figure 15. Power Gain, Output Power and Drain Efficiency versus Input Power

30.5

29.5

28.5

27.5

26.5

25.5

Pin, INPUT POWER (WATTS)

Pout

0.15

0.25

0.05

0.1

0.2

100

125

D

Gps

VDD =28 Vdc,IDQ = 450 mA, f = 136 MHz, CW

85_C

25_C

–40_C

85_C

TC = –40_C

25_C

–40_C

85_C

25_C

Figure 16. Power Gain, Output Power and Drain Efficiency versus Input Power over Temperature

30.5

29.5

28.5

27.5

26.5

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