Designed for two--way radio applications with frequencies from 136 to

941 MHz. The high gain, ruggedness and wideband performance of this

device make it ideal for large--signal, common--source amplifier applications in

radio equipment.

Typical Single--Carrier W–CDMA Production Fixture Performance:

Probability on CCDF

Frequency

(MHz)

(dB)

(%)

(W)

880

22.8

33.8

15

Frequency

(MHz)

(dB)

(%)

(W)

136

28.5

64.0

90

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal

Type

VSWR

(W)

Test

Voltage

Result

880

CW

> 10:1

at all Phase

Angles

1.3

32

No Device

Degradation

136

CW

>5:1

at all Phase

Angles

0.2

32

No Device

Degradation

Features

 Characterized for operation from 136 to 941 MHz

 Unmatched input and output allowing wide frequency range utilization

 Integrated ESD protection

 Wideband — full power across each mobile radio band

 Exceptional thermal performance

 High linearity for: TETRA, SSB, LTE

Typical Applications

 Output stage for VHF, UHF and 900 MHz 28 V base stations

 Output stage for VHF, UHF and 900 MHz high performance mobile radios

Data Sheet: Technical Data

A3T09S100N

Airfast RF Power LDMOS Transistor

Rev. 0 — March 2021

136–941 MHz, 100 W CW, 32 V

AIRFAST RF POWER LDMOS

TRANSISTOR

A3T09S100N

TO--270--2

PLASTIC

Figure 1. Pin Connections

(Top View)

Drain

Gate

Note: The backside of the package is the

source terminal for the transistor.

21

NXP reserves the right to change the detail specifications as may be required to permit

improvements in the design of its products.