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STM32WB15CC 데이터시트(PDF) 67 Page - STMicroelectronics |
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STM32WB15CC 데이터시트(HTML) 67 Page - STMicroelectronics |
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67 / 127 page ![]() DS13258 Rev 4 67/127 STM32WB15CC Electrical characteristics 115 6.3.4 Operating conditions at power-up / power-down The parameters given in Table 28 are derived from tests performed under the ambient temperature condition summarized in Table 21. Table 27. RF BLE power consumption for VDD = 3.3 V(1) 1. Power consumption including RF subsystem and digital processing. Symbol Parameter Typ Unit Itxmax TX maximum output power consumption (SMPS Bypass) 12.3 mA TX maximum output power consumption (SMPS On, VFBSMPS = 1.7 V) 7.4 Itx0dbm TX 0 dBm output power consumption (SMPS Bypass) 8.6 TX 0 dBm output power consumption (SMPS On, VFBSMPS = 1.4 V) 5.2 Irxlo Rx consumption (SMPS Bypass) 7.7 Rx consumption (SMPS On, VFBSMPS = 1.4 V) 4.5 Table 28. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate - - ∞ µs/V VDD fall time rate 10 ∞ tVDDA VDDA rise time rate - 0 ∞ VDDA fall time rate 10 ∞ tVDDRF VDDRF rise time rate - - ∞ VDDRF fall time rate - ∞ |
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