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STM32WB15CC 데이터시트(PDF) 96 Page - STMicroelectronics

부품명 STM32WB15CC
상세설명  Multiprotocol wireless 32-bit MCU Arm®-based Cortex®-M4 with FPU, Bluetooth® 5.2 radio solution
PDF  127 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32WB15CC 데이터시트(HTML) 96 Page - STMicroelectronics

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Electrical characteristics
STM32WB15CC
96/127
DS13258 Rev 4
to prevent unrecoverable errors occurring (see application note AN1015, available on
www.st.com).
Electromagnetic interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling two LEDs through the I/O ports). This emission test is compliant with the
IEC 61967-2 standard, which specifies the test board and the pin loading.
6.3.14
Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
a supply overvoltage is applied to each power supply pin
a current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 60. EMI characteristics
Symbol
Parameter
Conditions
Monitored
frequency band
Peripheral ON
[fHSE / fCPUM4, fCPUM0]
Unit
32 MHz / 64 MHz, 32 MHz
SEMI
Peak level
VDD = 3.6 V, TA = 25 °C,
UFQFPN48 package
compliant with IEC 61967-2
0.1 MHz to 30 MHz
4
dBµV
30 MHz to 130 MHz
8
130 MHz to 1 GHz
0
1 GHz to 2 GHz
9
EMI level
1.5
-
Table 61. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum value(1) Unit
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA = +25 °C, conforming to
ANSI/ESDA/JEDEC JS-001
2
2000
V
VESD(CDM)
Electrostatic discharge voltage
(charge device model)
TA = +25 °C, conforming to
ANSI/ESD STM5.3.1 JS-002
C2a
500
1. Evaluated by characterization, not tested in production.



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