IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

www.vishay.com

Vishay Siliconix

S21-0932-Rev. D, 13-Sep-2021

1

Document Number: 91293

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

• Advanced process technology

• Surface-mount (IRFZ44S, SiHFZ44S)

• Low-profile through-hole (IRFZ44L, SiHFZ44L)

• 175 °C operating temperature

• Fast switching

• Material categorization:



for definitions of compliance please see

www.vishay.com/doc?99912

Note



RoHS-compliant and / or parts that are non RoHS-compliant. For



example, parts with lead (Pb) terminations are not RoHS-compliant.



Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay utilize

advanced processing techniques to achieve extermely low

on resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

power MOSFETs are well known for, provides the designer

with an extermely efficient reliabel deviece for use in a wide

variety of applications.



accommodating die sizes up to HEX-4. It provides the

highest power capability and lowest possible on-resistance

suitable for high current applications because of its low

internal connection resistance and can dissipate up to 2.0 W

in a typical surface mount application.



The through-hole version (IRFZ44L, SiHFZ44L) is available

for low profile applications.

Note

a. See device orientation

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

d. 1.6 mm from case

e. Calculated continuous current based on maximum allowable junction temperature

f. Uses IRFZ44, SiHFZ44 data and test conditions

PRODUCT SUMMARY

60

0.028

67

18

25

Configuration

Single

N-Channel MOSFET

G

D

S

G

D

S

G

D

S

Available

Available

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

SiHFZ44S-GE3

SIHFZ44L-GE3

Lead (Pb)-free

IRFZ44SPbF

-

IRFZ44LPbF

PARAMETER

SYMBOL

LIMIT

UNIT

60

V

± 20

50

A

Continuous Drain Current

36

200

Linear Derating Factor

1.0

W/°C

100

mJ

Maximum Power Dissipation

3.7

W

150

dV/dt

4.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

for 10 s

300