IRFZ44STRLPBFA datasheet(2/11 Pages) VISHAY

2 / 11 page

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

www.vishay.com

Vishay Siliconix

S21-0932-Rev. D, 13-Sep-2021

Document Number: 91293

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

a. When mounted on 1” square PCB (FR-4 or G-10 material)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Pulse width

 300 μs; duty cycle  2 %

c. Uses IRFZ44, SiHFZ44 data and test conditions

d. Calculated continuous current based on maximum allowable junction temperature



THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

(PCB Mounted, steady-state)a

RthJA

-40

°C/W

Maximum Junction-to-Case

RthJC

-1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0, ID = 250 μA

VDS Temperature Coefficient

V

DS/TJ

Reference to 25 °C, ID = 1 mA

0.06

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

μA

VDS = 48 V, VGS = 0 V, TJ = 150 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 31 Ab

0.028



Forward Transconductance

gfs

VDS = 25 V, ID = 31 Ab

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5 d

1900

Output Capacitance

Coss

920

Reverse Transfer Capacitance

Crss

170

Total Gate Charge

VGS = 10 V

ID = 51 A, VDS = 48 V,

see fig. 6 and 13b

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 30 V, ID = 51 A,

Rg = 9.1 , RD = 0,55 ,

see fig. 10b

-14

Rise Time

110

Turn-Off Delay Time

td(off)

-45

Fall Time

-92

Internal Source Inductance

Between lead, and center of die contact

7.5

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

50d

Pulsed Diode Forward Currenta

ISM

200

Body Diode Voltage

VSD

TJ = 25 °C, IS = 51 A, VGS = 0 Vb

2.5

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μsb, d

120

180

Body Diode Reverse Recovery Charge

Qrr

530

800

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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