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FAM65CR51AXZ2 데이터시트(PDF) 7 Page - ON Semiconductor |
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FAM65CR51AXZ2 데이터시트(HTML) 7 Page - ON Semiconductor |
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7 / 14 page ![]() FAM65CR51AXZ1, FAM65CR51AXZ2 www.onsemi.com 7 Figure 3. Timing Measurement Variable Definition Table 8. PARAMETER OF SWITCHING CHARACTERISTICS Turn−On Delay (td(on)) This is the time needed to charge the input capacitance, Ciss, before the load current ID starts flowing. The measurement conditions are described in the Table 3. For signal definition please check Figure 3 above. Rise Time (tr) The rise time is the time to discharge output capacitance, Coss. After that time the MOSFET conducts the given load current ID. The measurement conditions are described in the Table 3. For signal definition please check Figure 3 above. Turn−On Time (ton) Is the sum of turn−on−delay and rise time Turn−Off Delay (td(off)) td(off) is the time to discharge Ciss after the MOSFET is turned off. During this time the load current ID is still flowing The measurement conditions are described in the Table 3. For signal definition please check Figure 3 above. Fall Time (tf) The fall time, tf, is the time to charge the output capacitance, Coss. During this time the load current drops down and the voltage VDS rises accordingly. The measurement conditions are described in the Table 3. For signal definition please check Figure 3 above. Turn−Off Time (toff): Is the sum of turn−off−delay and fall time |
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