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FAM65CR51AXZ2 데이터시트(PDF) 10 Page - ON Semiconductor |
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FAM65CR51AXZ2 데이터시트(HTML) 10 Page - ON Semiconductor |
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10 / 14 page ![]() FAM65CR51AXZ1, FAM65CR51AXZ2 www.onsemi.com 10 TYPICAL CHARACTERISTICS − MOSFETs 1.0E+02 1.0E+03 1.0E+04 1.0E+05 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 Figure 16. Gate Charge Characteristics Figure 17. ON−Resistance Variation with Drain Current and Gate Voltage Qg, GATE CHARGE (nC) ID, DRAIN CURRENT (A) 160 120 80 40 0 0 2 4 6 8 10 80 60 40 20 0 0.040 0.045 0.050 0.055 0.060 Figure 18. Safe Operating Area Figure 19. Peak Current Capability t, RECTANGULAR PULSE DURATION (s) Figure 20. Peak Power t, RECTANGULAR PULSE DURATION (sec) VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on) Limit Thermal Limit Package Limit 1 ms 10 ms 100 ms 100 ms Single Pulse Limited IDM 291 A TC = 25°C For temperatures above 25°C Derate peak current as follows: I + I25 150 * Tc 125 NOTE: RqJC = 0.27°C/W Duty Cycle: D = t1/t2 Peak TJ = PDM x ZqJC(t) + TC VDD = 130 V VDD = 400 V TC = 25°C VGS = 10 V VGS = 20 V 10 ms TC = 25°C RqJC = 0.27°C/W Single Pulse 0.1 1 10 100 1000 0.1 1 10 100 1000 10 100 1000 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 VGS = 10 V |
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