FAM65CR51AXZ1, FAM65CR51AXZ2

www.onsemi.com

3

INTERNAL EQUIVALENT CIRCUIT

Figure 2. Internal Block Diagram

Symbol

Parameter

Max

Unit

Drain−to−Source Voltage

650

V

Gate−to−Source Voltage

±20

V

64

A

40

A

Single Pulse Avalanche Energy (Note 2)

623

mJ

Power Dissipation (Note 1)

463

W

Maximum Junction Temperature

−55 to +150

°C

Maximum Case Temperature

−40 to +125

°C

Storage Temperature

−40 to +125

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

DBC Substrate

0.63 mm ALN alumina with 0.3 mm copper on both sides.

DBC substrate is NOT nickel plated.

Lead Frame

OFC copper alloy, 0.50 mm thick. Plated with 8

mm to

25.4

mm thick Matte Tin

Flammability Information

All materials present in the power module meet UL

flammability rating class 94V−0.

Compliance to RoHS Directives

The power module is 100% lead free and RoHS compliant

2000/53/C directive.

Solder

Solder used is a lead free SnAgCu alloy.

Solder presents high risk to melt at temperature beyond

210

°C. Base of the leads, at the interface with the package

body, should not be exposed to more than 200

°C during

mounting on the PCB or during welding to prevent the

re−melting of the solder joints.