DS0147 datasheet(13/128 Pages) MICROCHIP

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Condition

Unit

Max

Min

Symbol

Parameter

VDDIx = 1.35 V

µA

Pad pull-down when VIN = 1.35

VDDIx = 1.2 V

µA

Pad pull-down when VIN = 1.2

1. Represents the die input capacitance at the pad (not the package).

Table 7 • Minimum and Maximum Rise and Fall times

Condition

Maximum fre-

quency

Unit

Max

Min

Symbol

Parameter

Not to exceed 1

μs

100 KHz

10% bit period

200 ps

2,3

TRISE

TFALL

Input rise time

1,4

Input fall time

1,4

Not to exceed 30

0 ns

400 KHz

12.5% bit period

Not to exceed 50

50 MHz

20% bit period

800 MHz

1. Voltage ramp must be monotonic. For single-ended IO standards, input rise time is specified from

10%–90% of VDDIx and input fall time is specified from 90%–10% of VDDIx. For voltage referenced and

differential IO configurations, ramp times must always comply with I/O standard requirements to ensure

compliance.

2. Input slew rates must be controlled to never exceed PAD overshoot/undershoot requirements. Input

pad overshoot and undershoot specifications are shown in section Maximum Allowed Overshoot and

Undershoot.

3. Rise and fall times in this table are for unterminated inputs. When inputs are terminated, minimum

ramp time is not restricted. Recommended minimum ramp time is 25% of bit period, not to exceed a

rate of 5 V/ns.

4. Ramp times must not exceed I/O standard requirements to ensure compliance.

5.2.2

Maximum Allowed Overshoot and Undershoot

The following table lists the maximum AC input voltage (VIN) overshoot duration for HSIO.

During transitions, input signals may overshoot and undershoot the voltage listed as follows. Input currents

must be limited to less than 100 mA per latch-up specifications.

The maximum overshoot duration is specified as a high-time percentage over the lifetime of the device. A

DC signal is equivalent to 100% of the duty-cycle.

Table 8 • Maximum Overshoot During Transitions for HSIO

Condition (V)

AC (VIN) Overshoot Duration as % at TJ = 100 °C

1.8

100

1.85

100

1.9

100

Microsemi Proprietary and Confidential. DS0147 Revision 1.0

DC Characteristics

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