L99DZ200G datasheet(21/198 Pages) STMICROELECTRONICS

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DS13220 Rev 5

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L99DZ200G

Electrical specifications

197

All parameters are guaranteed in the junction temperature range -40 to 150°C (unless

otherwise specified); the device is still operative and functional at higher temperatures (up to

175°C).

Note:

Parameters limits at higher junction temperatures than 150°C may change with respect to

what is specified as per the standard temperature range.

Note:

Device functionality at high junction temperature is guaranteed by characterization.

3.3.1

LQFP64 thermal data

L99DZ200G embeds a multitude of junctions (i.e. Outputs based on a Power MOSFET

stage) housed in a relatively small piece of silicon. The devices contain, among all the

described features, 4 Half-bridges (8 N-Channel PowerMOS), 7 high-sides, two voltage

regulators (one of which can work as voltage tracker); all the other derivatives, even if

smaller than the family super set device, still contain a significant number of junctions.

For this reason, using the Thermal Impedance of a single junction (i.e. voltage regulator or

major power dissipation contributor) does not allow to predict thermal behavior of the whole

device and therefore it is not possible to assess if a device is thermally suitable for a given

activation profile and loads characteristics.

Thermal information is provided as temperature reading by different clusters placed close to

the most dissipative junctions.

Some representative and realistic worst-case thermal profiles are described in the below

paragraph.

The following measurement methods can be easily implemented, by the final user, for a

specific activation profile.

L99DZ200G thermal profiles

Activation Profile

Table 5. Temperature Warning and Thermal Shutdown

Item(1)

Symbol

Parameter

Min.

Typ.

Max.

Unit

F.025

Thermal warning threshold

(2)

140

150

160

°C

F.026

TSD1

Thermal shutdown junction

temperature 1

(2)

Cluster 1-4

165

175

185

°C

F.027

(2)

Cluster 5-6

165

175

193

F.028

TSD2

Thermal shutdown junction

temperature 2

(2)

175

185

198

°C

F.029

TSD12hys

Hysteresis

°C

F.030

Tjtft (3)

Thermal warning / shutdown

filter time

µs

1. The Item numbering is described in Section 3.4: Electrical characteristics.

2. Non-overlapping.

3. Tested by scan.

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