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L9945 데이터시트(PDF) 26 Page - STMicroelectronics

부품명 L9945
상세설명  Automotive fully configurable 8-channel High/Low side MOSFET pre-driver suitable for 12 V and 24 V systems
PDF  151 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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L9945 데이터시트(HTML) 26 Page - STMicroelectronics

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In case GCC_config_xx is programmed "0b00", an external resistor RG is required for protecting the transistor
gate against excessive current: the resistor must be mounted in series on the IPU / IPD path, as shown in
Figure 12. However, to prevent charge pump stress, L9945 internally limits the maximum charge/discharge
current to ICh0Gx/IDCh0Gx (refer to Table 15).
External measures have to be taken to keep the external MOS reliably OFF in case of output three-state. For
external NMOS a gate pull down resistor RPD is needed and for external PMOS a gate pull up resistor RPU is
necessary (refer to Figure 12).
In order to improve EMI behavior, an external Miller capacitor CM can be mounted between transistor gate and
drain. Value of this capacitor depends on:
The switching frequency required by the application;
The programmed charge/discharge current.
The AN "How To Improve EMI Behavior In Switching Applications" provides a guideline for CM selection. It also
helps choosing the right value for IPU/IPD in order to reduce EMI.
5.4.5
Internal and external clamping
The device guarantees a maximum gate to source voltage of 20 V by means of an internal clamping circuitry
which limits the overdrive. However, such a clamp is not intended as a protection against external spikes or
failures (STB/STG).
Figure 13. Clamping for HS configuration
GADG2702171244PS
GNSPxx
To load
VPS
CM
IPU
IPD
VGBHI
Internal
clamping
Control
signal
Control
signal
D
Ratings: NMOS ==> VGS = 20 V , PMOS ==> VSG = 20 V
evice side
Board side
HS NFET
VPS
GNSPxx
SNGPxx
DRNxx
External
clamping
CM
IPU
IPD
Internal
clamping
To load
Control
signal
Control
signal
Device side
Board side
HS PFET
SNGPxx
DRNxx
External
clamping
RPU
RG
RG
Figure 13 shows the recommended clamping for the external FETs used in HS configuration. The internal
clamping is meant to protect against overdrive but is not intended to be a recirculation path for the current. An
external freewheeling diode is needed for inductive switching loads.
L9945
Output pre-drivers
DS12275 - Rev 8
page 26/151



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