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L9945 데이터시트(PDF) 32 Page - STMicroelectronics

부품명 L9945
상세설명  Automotive fully configurable 8-channel High/Low side MOSFET pre-driver suitable for 12 V and 24 V systems
PDF  151 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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5.5.4
H-bridge disabling
When DIS/NDIS is asserted the H-bridge is disabled and all the pre-drivers are actively turned off. The same
behavior is observed when HiZ or NRES is asserted.
Table 21. H-bridge state for different DIS/NDIS and NRES
NRES
HiZ
HBx_config
DIS
NDIS
H-bridge state
0
0
1
0
1
All 4 MOSFET actively OFF
1
1
1
0
1
All 4 MOSFET actively OFF
1
0
1
0
0
All 4 MOSFET actively OFF
1
0
1
0
1
Normal operation
1
0
1
1
0
All 4 MOSFET actively OFF
1
0
1
1
1
All 4 MOSFET actively OFF
HBx_config must not be changed while H-Bridge is operating.
5.5.5
Overcurrent detection strategies for H-Bridge
The over current detection can be performed either by measuring the voltage drop on external shunt resistors or
through the Drain to Source Measurement of each transistor (DSM). Each transistor of the H-Bridge can detect
overcurrent independently. If an OC event occurs on a channel, the four devices will be actively shut-off and H-
Bridge outputs will be three-stated. Diagnostic latches have always to be cleared before re-engaging the H-Bridge
after an overcurrent detection. Different scenarios for OC detection are possible:
OC detection through one shunt resistor mounted on the low-side between SNGPx and PGNDxx pins, as
shown in Figure 16. DSM used for OC detection on the HS transistors.
To avoid inhomogeneous OC protection over the H-Bridge, OC threshold programmed for HS via DSM
must be adapted to the ones programmed on the LS via shunt sensing. OC threshold adaption must
account for the RDSon of the HS devices.
OC detection through two shunt resistors. The first mounted on the low-side between SNGPx and PGNDxx
pins, the second mounted on the high-side between GNSPx (PMOS)/DRNx (NMOS) and BATTxx pins (see
Figure 16).
To avoid inhomogeneous OC threshold for the H-Bridge, the two shunt resistors must be equal and the
four OC thresholds must hold the same value.
OC detection through DSM (see Figure 16)
In case the 4 MOSFETs are equal, the 4 OC thresholds must be equal;
In case the 2 FETs used on high-side are different from the ones on low-side, a different value for OC
threshold must be specified for the HS pair. OC threshold adaption must account for the RDSon of the
HS devices.
L9945
H-Bridge
DS12275 - Rev 8
page 32/151



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