STM32H753II datasheet(134/361 Pages) STMICROELECTRONICS

134 / 361 page

Electrical characteristics (rev Y)

STM32H753xI

134/360

DS12117 Rev 8

Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1

second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application,

executing EEMBC code, is running. This emission test is compliant with SAE IEC61967-2

standard which specifies the test board and the pin loading.

6.3.13

Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse) are applied to the pins of each

sample according to each pin combination. This test conforms to the ANSI/ESDA/JEDEC

JS-001 and ANSI/ESDA/JEDEC JS-002 standards.

Table 55. EMI characteristics

Symbol Parameter

Conditions

Monitored

frequency band

Max vs.

[fHSE/fCPU]

Unit

8/400 MHz

SEMI

Peak level

VDD = 3.6 V, TA = 25 °C, UFBGA240 package,

conforming to IEC61967-2

0.1 to 30 MHz

dBµV

30 to 130 MHz

130 MHz to 1 GHz

1 GHz to 2 GHz

EMI Level

2.5

Table 56. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Packages

Class

Maximum

value(1)

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body

model)

TA= +25 °C conforming to

ANSI/ESDA/JEDEC JS-

001

All

1000

VESD(CDM)

Electrostatic discharge

voltage (charge device

model)

TA = +25 °C conforming to

ANSI/ESDA/JEDEC JS-

002

All

250

1. Guaranteed by characterization results.

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