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STM32U595AI 데이터시트(PDF) 256 Page - STMicroelectronics

부품명 STM32U595AI
상세설명  Ultra-low-power Arm® Cortex®-M33 32-bit MCUTrustZone®FPU,240 DMIPS, up to 4 MB Flash, 2.5 MB SRAM, LTDC, MIPI® DSI
PDF  377 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32U595AI 데이터시트(HTML) 256 Page - STMicroelectronics

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Electrical characteristics
STM32U59xxx
256/377
DS13633 Rev 1
to prevent unrecoverable errors occurring. See application note Software techniques for
improving microcontrollers EMC performance (AN1015) for more details.
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device is monitored while a simple application is
executed (toggling two LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard that specifies the test board and the pin loading.
5.3.12
Electrical sensitivity characteristics
Based on three different tests (ESD, latch-up) using specific measurement methods, the
device is stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.
Table 80. EMI characteristics (for fHSE = 8 MHz, fHCLK = 160 MHz)
Symbol Parameter
Conditions
Monitored frequency
band
Value
Unit
SEMI
Peak(1)
VDD = 3.6 V, TA = 25 °C,
TFBGA216 package
compliant with IEC 61967-2
0.1 MHz to 30 MHz
4
dBμV
30 MHz to 130 MHz
11
130 MHz to 1 GHz
13
1 GHz to 2 GHz
9
Level(2)
0.1 MHz to 2 GHz
2.5
-
1.
Refer to the ‘EMI radiated test’ section of the application note EMC design guide for STM8, STM32 and legacy MCUs
(AN1709).
2. Refer to the ‘EMI level classification’ section of the same application note AN1709.
Table 81. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Packages Class Max. value(1) Unit
VESD(HBM)
Electrostatic discharge
voltage (human body model)
TA = +25 °C, conforming to
ANSI/ESDA/JEDEC JS-001
All
2
2000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device
model)
TA = +25 °C, conforming to
ANSI/ESDA/JEDEC JS-002
LQFP64
-
-
LPQF100
C1
250
LQFP144
C1
250
UFBGA132
C2b
750
WLCSP150
-
-
TFBGA169
-
-
WLCSP208
C1
250
TFBGA216
C2a
500
1. Evaluated by characterization. Not tested in production.



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