| 전자부품 데이터시트 검색엔진 |
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TSB582 데이터시트(PDF) 19 Page - STMicroelectronics |
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TSB582 데이터시트(HTML) 19 Page - STMicroelectronics |
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19 / 34 page ![]() when the op amp sources the current. Pd_amp=Vcc×Icc+ Vout−Vcc− ×Iload+ Vid − 1.3V ×Vid 1.5kΩ ifVid>1.3V (6) when the op amp sinks the current. Do not exceed the 150 °C maximum junction temperature for the device. Exceeding the junction temperature limit can cause degradation in the parametric performance or even destroy the device. 5.6 Thermal shutdown considerations To guarantee proper operation, precautions must be taken to keep the device die temperature below the maximum junction temperature. This is achieved by computing the dissipated power in the device and using a large enough copper area or heatsink on the PCB to reduce the thermal resistance between the device and its ambient. To protect the device, a thermal shutdown mechanism is implemented: • A thermal sensor continuously measures the average die temperature • If the temperature goes above a high threshold, the output power stage is turned OFF to allow the device to cool down • When the temperature goes back below a low threshold, the output power stage is turned ON again This safety behavior prevents the die from reaching a destructive temperature. Nevertheless, the device is not intended to continuously operate in such a condition. The application shall thus be designed with consideration to the maximum dissipated power and maximum temperature to keep the die below the thermal shutdown temperature threshold. When safe operating conditions cannot be guaranteed, external protection such as PTC or fuses shall be used. 5.7 Safe operating area Figure 29 and Figure 30 show the typical safe operating area (SOA) of the TSB582, where one amplifier is in load condition whereas the second one stays in idle mode without load. Depending on the intended application, the total power dissipation might be split over the two amplifiers. In case both amplifiers are used simultaneously, or the differential input voltage is forced to continuously exceed |Vid| = 1.3 V, a calculation of the junction temperature based on the total power dissipation is recommended, as demonstrated in Section 5.5 Maximum power dissipation. Figure 29. SO8 safe operating area, one channel active Figure 30. DFN8 safe operating area, one channel active TSB582 Thermal shutdown considerations DS13378 - Rev 2 page 19/34 |
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