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TSI721 데이터시트(PDF) 28 Page - Renesas Technology Corp

부품명 TSI721
상세설명  Table of Contents
PDF  67 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

TSI721 데이터시트(HTML) 28 Page - Renesas Technology Corp

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Tsi721 Datasheet
28
April 4, 2016
Integrated Device Technology
3.2
Recommended Operating Conditions
3.3
Power Consumption
Table 13 lists the current draw for each supply group for different environmental conditions. Test characteristics were are
follows:
• RapidIO and PCIe links configured at operated at 5 Gbps in x4 mode
• Traffic passed through the Tsi721 with a high incidence of 0/1 toggling
• Power measurements are based on worst case fast silicon processing. A “Total Power” reduction in excess of 5% can be
expected for nominal/typical silicon.
Table 12: Recommended Operating Conditionsa
a. Exposure to conditions outside the recommended operating conditions can affect the operation and/or reliability of the device.
Symbol
Parameter
Minimum
Maximum
Units
TA
Ambient temperature – Commercial
0
70
C
Ambient temperature – Industrial
-40
85
C
TJN
Junction temperature
-
110
C
VDDIO
3.3V LVTTL I/O supply voltage
3.14
3.47
V
2.5V LVTTL I/O supply voltage
2.4
2.6
V
VDD
1.0V Core supply voltage
0.95
1.05
V
AVDD10
1.0V SerDes analog supply voltage
0.95
1.05
V
AVDD25
2.5V SerDes analog supply voltage
2.25
2.75
V
AVTT
1.5V SerDes transmitter analog supply voltage
1.4
1.7
V
Table 13: Power Consumption
Junction
Temp
(0C)
Voltage
VDD
AVDD10
AVDD25
AVTT
VDDIO
Total
Power (W)
Voltage
(V)
Current
[mA]
Voltage
(V)
Current
[mA]
Voltage
(V)
Current
[mA]
Voltage
(V)
Current
[mA]
Voltage
(V)
Current
[mA]
125
Max.
1.05
3000
1.05
330
2.75
165
1.70
350
3.47
20
4.61
Typ.
1.00
2722
1.00
281
2.50
153
1.50
335
3.30
18
3.95
Min.
0.95
2458
0.95
242
2.25
144
1.40
320
3.14
17
3.39
25
Max.
1.05
1110
1.05
214
2.75
161
1.70
350
3.47
20
2.50
Typ.
1.00
1003
1.00
190
2.50
151
1.50
335
3.30
18
2.13
Min.
0.95
909
0.95
170
2.25
142
1.40
320
3.14
17
1.85



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