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NAND02G-B2C 데이터시트(PDF) 33 Page - STMicroelectronics |
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NAND02G-B2C 데이터시트(HTML) 33 Page - STMicroelectronics |
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33 / 62 page ![]() NAND01G-B2B, NAND02G-B2C Device operations 33/62 6.9 Read Electronic Signature The device contains a Manufacturer Code and Device Code. To read these codes three steps are required: 1. one Bus Write cycle to issue the Read Electronic Signature command (90h) 2. one Bus Write cycle to input the address (00h) 3. four Bus Read Cycles to sequentially output the data (as shown in Table 14: Electronic Signature). Table 14. Electronic Signature Part Number Byte/Word 1 Byte/Word 2 Byte/Word 3 (see Table 15) Byte/Word 4 (see Table 16) Manufacturer Code Device code NAND01GR3B2B 20h A1h 80h 15h NAND01GW3B2B F1h 1Dh NAND01GR4B2B 0020h B1h 55h NAND01GW4B2B C1h 5Dh NAND02GR3B2C 20h AAh 15h NAND02GW3B2C DAh 1Dh NAND02GR4B2C 0020h BAh 55h NAND02GW42C CAh 5Dh Table 15. Electronic Signature Byte 3 I/O Definition Value Description I/O1-I/O0 Internal Chip number 0 0 0 1 1 0 1 1 1 2 4 8 I/O3-I/O2 Cell Type 0 0 0 1 1 0 1 1 2-level cell 4-level cell 8-level cell 16-level cell I/O5-I/O4 Number of simultaneously programmed pages 0 0 0 1 1 0 1 1 1 2 4 8 I/O6 Interleaved Programming between multiple devices 0 1 Not supported Supported I/O7 Cache Program 0 1 Not supported Supported |
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